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| polyfet rf devices SQ721 General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedback and output capacitances resulting in high F t transistors with high input impedance and high efficiency. TM SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR 25.0 Watts Push - Pull Package Style AQ HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE o ABSOLUTE MAXIMUM RATINGS ( T = 25 C ) Total Device Dissipation 110 Watts Junction to Case Thermal Resistance o 1.40 C/W Maximum Junction Temperature o 200 C Storage Temperature o o -65 C to 150 C DC Drain Current Drain to Gate Voltage 50 V Drain to Source Voltage 50 V Gate to Source Voltage 20 V 11.0 A RF CHARACTERISTICS ( SYMBOL Gps PARAMETER Common Source Power Gain Drain Efficiency Load Mismatch Tolerance MIN 10 60 TYP 25.0 WATTS OUTPUT ) MAX UNITS dB % 20:1 TEST CONDITIONS Idq = 0.40 A, Vds = 12.5 V, F = Idq = 0.40 A, Vds = 12.5 V, F = 400 MHz 400 MHz VSWR Relative Idq = 0.40 A, Vds = 12.5 V, F = 400 MHz ELECTRICAL CHARACTERISTICS ( EACH SIDE ) SYMBOL Bvdss Idss Igss Vgs gM Rdson Idsat Ciss Crss Coss PARAMETER Drain Breakdown Voltage Zero Bias Drain Current Gate Leakage Current Gate Bias for Drain Current Forward Transconductance Saturation Resistance Saturation Current Common Source Input Capacitance Common Source Feedback Capacitance Common Source Output Capacitance 1 1.3 0.60 9.50 45.0 3.5 55.0 MIN 40 1.0 1 7 TYP MAX UNITS V mA uA V Mho Ohm Amp pF pF pF TEST CONDITIONS Ids = 20.00 mA, Vgs = 0V Vds = 12.5 V, Vgs = 0V Vds = 0V Vgs = 30V Ids = 0.10 A, Vgs = Vds Vds = 10V, Vgs = 5V Vgs = 20V, Ids = 3.50 A Vgs = 20V, Vds = 10V Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz Vds = 12.5 Vgs = 0V, F = 1 MHz POLYFET RF DEVICES REVISION 03/28/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com SQ721 POUT VS PIN GRAPH SQ721 POUT VS PIN Freq=400MHz, VDS=12.5V, Idq=.4A 1000 CAPACITANCE VS VOLTAGE S1C 1 DIE CAPACITANCE 18.00 35 30 Pout 25 20 15 16.00 100 Coss 14.00 Ciss Efficiency = 60% 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 PIN IN WATTS 8.00 1 0 5 10 15 20 25 30 12.00 Gain 10.00 10 Crss VDS IN VOLTS IV CURVE S1C 1 DIE IV 10 9 8 7 ID IN AMPS 6 5 4 3 2 1 0 0 2 vg=2v 4 6 Vg=4v 8 10 12 VDS Vg=6v INVOLTSvg=8v 14 0 16 18 vg=12v 20 ID & GM VS VGS 10.00 S1C 1 DIE ID & GM Vs VG Id Id in amps; Gm in mhos 1.00 gM 0.10 0.01 0 2 4 6 8 10 Vgs in Volts 12 14 16 18 Zin Zout PACKAGE DIMENSIONS IN INCHES Tolerance .XX +/-0.01 .XXX +/-.005 inches POLYFET RF DEVICES REVISION 03/28/2001 1110 Avenida Acaso, Camarillo, Ca 93012 Tel:(805) 484-4210 FAX: (805) 484-3393 EMAIL:Sales@polyfet.com URL:www.polyfet.com |
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